LHF32KZ5 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LHF32KZ5' PDF : 66 Pages View PDF
sharp
LHF32KZ5
50
6.2.8 BLOCK ERASE, BANK ERASE, (MULTI) WORD/BYTE WRITE AND BLOCK LOCK-
BIT CONFIGURATION PERFORMANCE(3)
Sym.
Parameter
VCC=2.7V-3.6V, TA=0°C to +70°C
VPP=2.7V-3.6V VPP=3.0V-3.6V
Notes Typ.(1) Max. Typ.(1) Max.
VPP=4.5V-5.5V
Typ.(1) Max.
Unit
tWHQV1
tEHQV1
Word/Byte Write Time
(using W/B write, in word
mode)
2 22.19 250 22.19 250
13.2
180
µs
tWHQV1
tEHQV1
Word/Byte Write Time
(using W/B write, in byte
mode)
2
19.9 250
19.9 250 13.2
180
µs
Word/Byte Write Time
(using multi word/byte write)
2
5.76 250
5.76 250 2.76
180
µs
Block Write Time
(using W/B write, in word
2
0.73
8.2
0.73
8.2
0.44
4.8
s
mode)
Block Write Time
(using W/B write, in byte
2
1.31 16.5 1.31 16.5 0.87 10.9
s
mode)
Block Write Time
(using multi word/byte write)
2
0.37
4.1
0.37
4.1
0.18
2
s
tWHQV2
tEHQV2
Block Erase Time
Bank Erase Time
2
0.56
10
0.56
10
0.42
10
s
17.9 320 17.9 320 13.4 320
s
tWHQV3
tEHQV3
Set Block Lock-Bit Time
2
tWHQV4
tEHQV4
Clear Block Lock-Bits Time
2
tWHRZ1 Write Suspend Latency Time
tEHRZ1 to Read
tWHRZ2 Erase Suspend Latency
tEHRZ2 Time to Read
NOTE:
22.17 250 22.17 250
13.2
180
µs
0.56
10
0.56
10
0.42
10
s
7.24 10.2 7.24 10.2 6.73 9.48 µs
15.5 21.5 15.5 21.5 12.54 17.54 µs
See 5.0V VCC Block Erase, Bank Erase, (Multi) Word/Byte Write and Block Lock-Bit Configuration Performance for
notes 1 through 3.
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