Stacked Chip (8M Flash & 2M SRAM)
LRS1338A
FLASH DC CHARACTERISTICS
SYMBOL
PARAMETER
VCC = 2.7 V to 3.6 V UNIT
MIN.
MAX.
TEST
CONDITIONS
NOTES
ILI
ILO
ICCS
ICCD
ICCR
ICCW
ICCE
ICCWS
ICCES
IPPS
IPPR
IPPD
IPPW
IPPE
IPPWS
IPPES
VIL
VIH
VOL
VOH1
VOH2
VPPLK
Input Load Current
Output Leakage Current
25
VCC Standby Current
0.2
VCC Deep Power-Down Current
4
15
VCC Read Current
VCC Word Write Current
5
VCC Block Erase Current
4
VCC Word Write or Block
Erase Suspend Current
1
±0.5
±0.5
50
2
20
25
30
17
17
6
µA VCC = VCC MAX., VIN = VCC or GND
1
µA VCC = VCC MAX., VOUT = VCC or GND
1
µA
CMOS Inputs, VCC = VCC MAX.,
CE = RP = VCC ± 0.2 V
1, 2
mA
TTL Inputs, VCC = VCC MAX.,
CE = RP = VIH
1, 2
µA RP = GND ± 0.2 V
1
mA
CMOS Inputs, VCC = VCC MAX.,
CE = GND, f = 5 MHz, IOUT = 0 mA
mA
TTL Inputs, VCC = VCC MAX.,
CE = GND, f = 5 MHz, IOUT = 0 mA
mA VPP = VPPH
mA VPP = VPPH
1, 2, 3
1, 2, 3
1, 4
1, 4
mA CE = VIH
1, 5
±2
VPP Standby or Read Current
10
±15
20.0
µA VPP ≤ VCC
µA VPP > VCC
1
1
VPP Deep Power-Down Current
0.1
5
µA RP = GND ± 0.2 V
1
VPP Word Write Current
12
40
mA VPP = VPPH
1, 4
VPP Block Erase Current
8
25
mA VPP = VPPH
1, 4
VPP Word Write or Block Erase
Suspend Current
10
200
µA VPP = VPPH
1
Input LOW Voltage
-0.5
0.8
V
4
Input HIGH Voltage
2.0 VCC + 0.5 V
4
Output LOW Voltage
0.4
V VCC = VCC MIN., IOL = 2.0 mA
4
Output HIGH Voltage (TTL)
2.4
V VCC = VCC MIN., IOH = 1.0 mA
4
Output HIGH Voltage (CMOS)
0.85 VCC
VCC -0.4
V VCC = VCC MIN., IOH = 2.5 mA
4
V VCC = VCC MIN., IOH = -100 µA
4
VPP Lockout during
Normal Operations
1.5
V
4, 6
VPPH
VPP during Word Write or Block
Erase Operations
2.7
3.6
V
VLKO VCC Lockout Voltage
2.0
V
VHH RP Unlock Voltage
11.4
12.6
V Unable WP
7, 8
NOTES:
1. All currents are in RMS unless otherwise noted.
2. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs
are either VIL or VIH.
3. Automatic Power Savings (APS) reduces typical ICCR to 3 mA at
3.3 V VCC in static operation.
4. Sampled, not 100% tested.
5. ICCWS and ICCES are specified with the device de-selected. If read
or word written while in erase suspend mode, the device’s current
draw is the sum of ICCWS or ICCES and ICCR or ICCW, respectively.
6. Block erases and word writes are inhibited when VPP ≤ VPPLK,
and not guaranteed in the range between VPPLK (MAX.) and
VPPH (MIN.).
7. Block erases and word writes are inhibited when the correspond-
ing RP = VIH or WP = VIL. Block erase and word write operations
are not guaranteed with VCC < 3.0 V or VIH < RP < VHH and
should not be attempted.
8. RP connection to a VHH supply is allowed for a maximum cumu-
lative period of 80 hours.
Data Sheet
21