FUM00701
2
1 Introduction
This appendix describes how to use the LH28F320BX/
LH28F640BX series, Synchronous/Page Mode Dual
Work Flash memory. Section 1 outlines the
LH28F320BX/LH28F640BX series. Sections 2, 3, 4 and
5 describe the memory organization and functionality.
When designing a specific system, take into design
considerations described in Section 5.
1.1 Features
Synchronous/Page Mode Dual Work Flash memory
LH28F320BX/LH28F640BX series has the following
features:
• Dual work operation
• Flexible partition configuration
• High performance asynchronous reads and
synchronous burst reads
• Page buffer program
• Individual block locking and all blocks locked on
power-up
• 8-word OTP (One Time Program) block
• Low power consumption
• Parameter block architecture
1.2 Definition of Block, Plane and Partition
Block, Plane and Partition are defined and used in this
document as explained below.
• Block
Main Block: 32K Words.
Parameter Block: 4K Words.
32M-bit device has 8 parameter blocks and 63 main
blocks.
64M-bit device has 8 parameter blocks and 127 main
blocks.
• Plane: 32M-bit and 64M-bit devices are divided into
four physical planes (see Table 1).
Plane0 or Plane3 contains parameter blocks and main
blocks. Plane1 and Plane2 consist of only main
blocks.
• Partition: Read operation can be done in one partition
while Program/Erase operation is being done in
another partition. Partition contains at least one plane
or up to four planes. Partition boundaries can be
flexibly set to any plane boundary by the Set Partition
Configuration Register command. If the partition
configuration register is set to "111" (4 plane dual
work mode), the partition is exactly the same as a
plane. See Section 4.17 for more information.
Table 1. Address Range of Each Plane
Plane #
Contains the Blocks within the following
Address
32M bit
64M bit
Plane 0 000000H-07FFFFH 000000H-0FFFFFH
Plane 1 080000H-0FFFFFH 100000H-1FFFFFH
Plane 2 100000H-17FFFFH 200000H-2FFFFFH
Plane 3 180000H-1FFFFFH 300000H-3FFFFFH
1.3 Product Overview
Synchronous/Page Mode Dual Work Flash memory
LH28F320BX/LH28F640BX series is capable of dual
work operation: erase or program operation on one
partition and read operation on other partitions (see Table
2). The partition to be accessed is automatically identified
according to the input address. Dual work operations can
be achieved by dividing the memory array into four
physical planes as shown in Figure 2.1 through Figure
3.2. Each plane is exactly one quarter of the entire
memory array. The device has also virtual partitions.
Several planes can be flexibly merged to one partition by
writing the Set Partition Configuration Register
command. This feature allows the user to read from one
partition even though one of the other partitions is
executing an erase or program operation. If the device is
set to the 4 partitions configuration, each partition is
exactly the same as each physical plane. After power-up
or device reset, plane 0-2 are merged into one partition for
top parameter devices and plane1-3 are merged into one
partition for bottom parameter devices.
During dual work operation, read operations to the
partition being erased or programmed access the status
register which indicates whether the erase or program
operation is successfully completed or not. Dual work
operation cannot be executed during full chip erase and
OTP program mode.
Memory array data can be read in two ways, that is,
asynchronous 8-word page mode or synchronous burst
mode. The default after power-up or device reset is the
asynchronous read mode in which 8-word page mode is
available. The user must set the read configuration
register to enable the synchronous burst mode by writing
the Set Read Configuration Register command. CLK is
then used to increment the internal burst address
generator, synchronize with the host, and deliver data
every clock cycle. The WAIT# output pin is used to signal
Synchronous burst mode will be available for future device.
Appendix to Spec No.: MFM2-J13207 Model No.: LRS1383 March 1, 2001
Rev. 2.20