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Part Name
Description
LT1158CS View Datasheet(PDF) - Linear Technology
Part Name
Description
MFG CO.
LT1158CS
Half Bridge N-Channel Power MOSFET Driver
Linear Technology
'LT1158CS' PDF : 20 Pages
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LT1158
TYPICAL PERFORMANCE CHARACTERISTICS
Dynamic Supply Current
40
50% DUTY CYCLE
35 V
+
= 12V
30
25
C
GATE
= 10000pF
20
C
GATE
= 3000pF
15
10
C
GATE
= 1000pF
5
0
1
10
100
INPUT FREQUENCY (kHz)
LT1158 G04
Enable Thresholds
3.5
3.0
V(HIGH)
–40°C
+25°C
2.5
+85°C
2.0
1.5
–40°C
+25°C
1.0
V(LOW)
+85°C
0.5
0
0 5 10 15 20 25 30 35 40
SUPPLY VOLTAGE (V)
LT1158 G07
Current Limit Inhibit V
DS
Threshold
1.50
1.45
V2 – V11
1.40
1.35
1.30
–40°C
1.25
+25°C
1.20
+85°C
1.15
1.10
1.05
1.00
0 5 10 15 20 25 30 35 40
SUPPLY VOLTAGE (V)
LT1158 G10
Charge Pump Output Voltage
50
45
40
35
30
NO LOAD
25
20
10
µ
A LOAD
15
10
5
0
0 5 10 15 20 25 30 35 40
SUPPLY VOLTAGE (V)
LT1158 G05
Fault Conduction Threshold
160
150
V11 = 0V
140
130
120
+85°C
110
+25°C
100
–40°C
90
80
70
60
0 5 10 15 20 25 30 35 40
SUPPLY VOLTAGE (V)
LT1158 G08
Bottom Gate Rise Time
400
350
300
250
C
GATE
= 10000pF
200
150
C
GATE
= 3000pF
100
50
C
GATE
= 1000pF
0
0 5 10 15 20 25 30 35 40
SUPPLY VOLTAGE (V)
LT1158 G11
Input Thresholds
2.0
1.8
1.6
V(HIGH)
1.4
1.2
V(LOW)
1.0
–40°C
+25°C
+85°C
–40°C
+25°C
+85°C
0.8
0 5 10 15 20 25 30 35 40
SUPPLY VOLTAGE (V)
LT1158 G06
Current Limit Threshold
200
CLOSED LOOP
190
180
170
160
150
+85°C
+25°C
140
–40°C
130
120
110
100
0
5 10 15 20 25 30 35 40
SUPPLY VOLTAGE (V)
LT1158 G09
Bottom Gate Fall Time
400
350
300
C
GATE
= 10000pF
250
200
150
C
GATE
= 3000pF
100
50
C
GATE
= 1000pF
0
0 5 10 15 20 25 30 35 40
SUPPLY VOLTAGE (V)
LT1158 G12
4
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