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LTC6803-2 View Datasheet(PDF) - Linear Technology

Part Name
Description
MFG CO.
LTC6803-2
Linear
Linear Technology Linear
'LTC6803-2' PDF : 40 Pages View PDF
LTC6803-2/LTC6803-4
APPLICATIONS INFORMATION
CELLGROUP+
WDTB
VREG
VTEMP1
V
CELLGROUP
499k
1M
8
3
1 1/2 LT6004
2
1
2N7002K
2
3
1µF
10nF
4
31.6k
680324 F19
Figure 19. Using a VTEMP Input for Full-Stack Readings
the resistive loading on the cell group when the IC enters
standby mode (i.e., when WDTB goes low). An LT6004
micropower operational amplifier section is shown for
buffering the divider signal to preserve accuracy. This
circuit has the virtue that it can be converted about four
times more frequently than the entire battery array, thus
offering a higher sample rate option at the expense of
some precision/accuracy, reserving the high resolution
cell readings for calibration and balancing data.
PROVIDING HIGH SPEED ISOLATION OF THE SPI DATA
PORT
Isolation techniques that are capable of supporting the
1Mbps data rate of the LTC6803-2/LTC6803-4 require more
power on the isolated (battery) side than can be furnished
by the VREG output of the LTC6803-2/LTC6803-4. To keep
battery drain minimal, this means that a DC/DC function
must be implemented along with a suitable data isolation
circuit, such as shown in Figure 20. A quad (3 + 1) data
isolator Si8441AB-C-IS is used to provide non-galvanic
SPI signal connections between a host microprocessor
and an LTC6803-2/LTC6803-4. An inexpensive isolated DC/
DC converter provides powering of the isolator function
completely from the host 5V power supply. A quad three-
state buffer is used to allow SPI inputs at the LTC6803-2/
LTC6803-4 to rise to a logic high level when the isolator
circuitry powers down, assuring the lowest power con-
sumption in the standby condition. The pull-ups to VREG
are selected to match the internal loading on VREG by ICs
operating with a current mode SPI interface, thus balanc-
ing the current in all cells during operation. The additional
pull-up on the SDO line (1k resistor and Schottky diode)
is to improve rise time, in lower data rate applications this
may not be needed.
5V_HOST
SPI_CLOCK
SPI_CHIPSELECT
SPI_MASTEROUT
SPI_MASTERIN
GND_HOST
100Ω
100Ω
100Ω
100Ω
1µF
1µF
470pF
20.0k
10.0k
1 LTC1693-2 8
IN1 VCC1
2
7
GND1 OUT1
3
IN2
6
VCC2
4
5
GND2 OUT2
Si8441AB-C-IS
QUAD ISOLATOR
1
16
VDD1
VDD2
2
15
GND1 GND2
3
A1
14
B1
4
A2
13
B2
5
A3
12
B3
6
A4
11
B4
7
EN1
10
EN2
8
9
GND1 GND2
33nF
PE-68386
1• •6
3
4
CMDSH2-3
1k
13
12 11
1/4 74ABT126 1
2
3
4
1/4 74ABT126
5
6
1µF
1/4 74ABT126 10
89
1/4 74ABT126
BAT54S
74ABT126 SUPPLY SHARED WITH
ISOLATOR VDD2 and GND2
4.22k
4.22k
4.22k
4.22k
VREG
SCKI
CSB1
SCI
SDO
V
680324 F20
34
Figure 20. Providing an Isolated High Speed Data Interface
680324f
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