M24256-BHR View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M24256-BHR
STMicroelectronics
'M24256-BHR' PDF : 37 Pages View PDF
DC and AC parameters
M24512-x, M24256-Bx
Table 12. Input parameters
Symbol
Parameter(1)
Test condition
Min.
Max.
Unit
CIN Input capacitance (SDA)
8
pF
CIN Input capacitance (other pins)
6
pF
ZL(2)
Input impedance
(E2, E1, E0, WC)
VIN < 0.3VCC
30
kΩ
ZH(2)
Input impedance
(E2, E1, E0, WC)
VIN > 0.7VCC
500
kΩ
1. Sampled only, not 100% tested.
2. E2,E1,E0: Input impedance when the memory is selected (after a Start condition).
Table 13. DC characteristics (M24xxx-W)
Symbol
Parameter
Test conditions (see Table 8 and
Table 11)
Min.
Max. Unit
ILI
Input leakage current
(SCL, SDA, E0, E1,
VIN = VSS or VCC
E2)
device in Standby mode
± 2 µA
ILO
Output leakage
current
SDA in Hi-Z, external voltage applied
on SDA: VSS or VCC
± 2 µA
VCC = 2.5 V, fc = 400 kHz
(rise/fall time < 50 ns)
ICC
Supply current (Read)
VCC = 5.5 V, fc = 400 kHz
(rise/fall time < 50 ns)
1
mA
2
mA
ICC0 Supply current (Write) During tW, 2.5 V < VCC < 5.5 V
5(1)
mA
ICC1
Standby supply
current
Device not
Device grade 3
selected(2), VIN = VSS
or VCC, VCC = 2.5 V Device grade 6
5
µA
2
VIN = VSS or VCC, VCC = 5.5 V
5
µA
VIL
Input low voltage
(SCL, SDA, WC)
–0.45 0.3VCC V
VIH
Input high voltage
(SCL, SDA, WC)
0.7VCC VCC+0.6 V
VOL Output low voltage IOL = 2.1 mA, VCC = 2.5 V
0.4
V
1. Characterized value, not tested in production.
2. The device is not selected after power-up, after a READ command (after the Stop condition), or after the
completion of the internal write cycle tW (tW is triggered by the correct decoding of a WRITE command).
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