M25P16-VMF3TP View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'M25P16-VMF3TP' PDF : 62 Pages View PDF
Micron M25P16 Serial Flash Embedded Memory
Power-Up Timing and Write Inhibit Voltage Threshold Specifi-
cations
Power-Up Timing and Write Inhibit Voltage Threshold Specifications
Table 13: Power-Up Timing and VWI Threshold
Symbol
tVSL
tPUW
VWI
Parameter
VCC(min) to S# LOW
Time delay to write instruction
Write Inhibit voltage
Min
30
1.0
1.0
Max
–
10
2.1
Unit
μs
ms
V
Note: 1. Parameters are characterized only.
If the time, tVSL, has elapsed, after VCC rises above VCC(min), the device can be selected
for READ instructions even if the tPUW delay has not yet fully elapsed.
VPPH must be applied only when VCC is stable and in the VCCmin to VCCmax voltage
range.
PDF: 09005aef8456656c
m25p16.pdf - Rev. J 1/18 EN
40
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