M25P16-VMN3TP View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'M25P16-VMN3TP' PDF : 62 Pages View PDF
Electrical Characteristics
Micron M25P16 Serial Flash Embedded Memory
Electrical Characteristics
Table 17: DC Current Specifications
Symbol
ILI
ILO
ICC1
ICC1
ICC2
ICC2
Parameter
Input leakage current
Output leakage current
Standby current (grade 6)
Standby current (grade 3)
Deep power-down current (grade
6)
Deep power-down current (grade
3)
Test Conditions
–
–
S# = VCC, VIN = VSS or VCC
S# = VCC, VIN = VSS or VCC
ICC3
Operating current (READ)
ICC4
ICC5
ICC6
ICC7
ICCPP
IPP
Operating current
(PAGE PROGRAM)
Operating current
(WRITE STATUS REGISTER)
Operating current
(SECTOR ERASE)
Operating current
(BULK ERASE)
Operating current
(FAST PROGRAM/ERASE)
Vpp operating current
(FAST PROGRAM/ERASE)
C = 0.1VCC / 0.9VCC at 75MHz, DQ1 =
open
C = 0.1VCC / 0.9VCC at 33MHz, DQ1 =
open
S# = VCC
S# = VCC
S# = VCC
S# = VCC
S# = VCC, Vpp = VPPH
S# = VCC, Vpp = VPPH
Min
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max
±2
±2
50
100
10
100
100
50
8
4
15
15
15
15
20
20
Units
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
Table 18: DC Voltage Specifications
Symbol
VIL
VIH
VOL
VOH
Parameter
Input LOW voltage
Input HIGH voltage
Output LOW voltage
Output HIGH voltage
Test Conditions
–
–
IOL = 1.6mA
IOH = –100µA
Min
–0.5
0.7VCC
–
VCC–0.2
Max
0.3VCC
VCC+0.4
0.4
–
Units
V
V
V
V
PDF: 09005aef8456656c
m25p16.pdf - Rev. J 1/18 EN
43
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