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M25P16-VMN3TP View Datasheet(PDF) - Micron Technology

Part Name
Description
MFG CO.
M25P16-VMN3TP
Micron
Micron Technology Micron
'M25P16-VMN3TP' PDF : 62 Pages View PDF
Micron M25P16 Serial Flash Embedded Memory
AC Characteristics
Table 21: AC Specifications (25 MHz, Device Grade 3, VCC[min]=2.7V) (Continued)
Symbol Alt. Parameter
Min Typ Max
tCHSL
— S# not active hold time (relative to C)
10
tDVCH
tDSU Data in setup time
5
tCHDX
tDH Data in hold time
5
tCHSH
– S# active hold time (relative to C)
10
tSHCH
– S# not active setup time (relative to C)
10
tSHSL
tCSH S# deselect time
100
tSHQZ
tDIS Output disable time
15
tCLQV
tV Clock LOW to output valid
15
tCLQX
tHO Output hold time
0
tHLCH
– HOLD# setup time (relative to C)
10
tCHHH
– HOLD# hold time (relative to C)
10
tHHCH
– HOLD# setup time (relative to C)
10
tCHHL
– HOLD# hold time (relative to C)
10
tHHQX
tLZ HOLD# to output LOW-Z
15
tHLQZ
tHZ HOLD# to output HIGH-Z
20
tWHSL
– WRITE PROTECT setup time
20
tSHWL
– WRITE PROTECT hold time
100
tDP
– S# HIGH to DEEP POWER-DOWN mode
3
tRES1
– S# HIGH to STANDBY without READ ELECTRONIC SIGNA-
TURE
30
tRES2
– S# HIGH to STANDBY with READ ELECTRONIC SIGNATURE –
30
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
Notes
3
3
3
5
5
3
3
μs
3
Notes:
1. READ DATA BYTES at HIGHER SPEED, PAGE PROGRAM, SECTOR ERASE, BLOCK ERASE,
DEEP POWER-DOWN, READ ELECTRONIC SIGNATURE, WRITE ENABLE/DISABLE, READ ID,
READ/WRITE STATUS REGISTER
2. The tCH and tCL signals must be greater than or equal to 1/fC.
3. The tCLCH, tCHCL, tSHQZ, tHHQX, tHLQZ, tDP, tRES1, and tRES2 signal values are guaranteed by
characterization, not 100% tested in production.
4. The tCLCH and tCHCLsignals clock rise and fall time values are expressed as a slew-rate.
5. The tWHSL and tSHWLsignals are only applicable as a constraint for a WRITE STATUS REGIS-
TER command when SRWD bit is set at 1.
Table 22: Instruction Times (25 MHz, Device Grade 3, VCC[min]=2.7V)
Symbol
tW
tPP
tPP
Parameter
WRITE STATUS REGISTER cycle time
PAGE PROGRAM cycle time (256 bytes)
PAGE PROGRAM cycle time (n bytes)
tSE
SECTOR ERASE cycle time
Min
Typ
1.5
0.8
int (n/8) x
0.025
0.8
Max
15
5
3
Units
ms
ms
Notes
2, 3
s
PDF: 09005aef8456656c
m25p16.pdf - Rev. J 1/18 EN
45
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