M29W800B View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M29W800B
STMicroelectronics
'M29W800B' PDF : 33 Pages View PDF
M29W800T, M29W800B
Table 14B. Read AC Characteristics
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W800T / M29W800B
Symbol Alt
Parameter
Test
Condition
-120
VCC = 2.7V to 3.6V
CL = 100pF
-150
VCC = 2.7V to 3.6V
CL = 100pF
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next
Address Valid
E = VIL,
G = VIL
120
150
tAVQV
tACC
Address Valid to Output
Valid
E = VIL,
G = VIL
120
150
tELQX (1)
tL Z
Chip Enable Low to
Output Transition
G = VIL
0
0
tELQV (2)
tCE
Chip Enable Low to
Output Valid
G = VIL
120
150
tGLQX (1)
tOLZ
Output Enable Low to
Output Transition
E = VIL
0
0
tGLQV (2)
tOE
Output Enable Low to
Output Valid
E = VIL
50
55
tEHQX
tOH
Chip Enable High to
Output Transition
G = VIL
0
0
tEHQZ (1)
tHZ
Chip Enable High to
Output Hi-Z
G = VIL
30
40
tGHQX
tOH
Output Enable High to
Output Transition
E = VIL
0
0
tGHQZ (1)
tDF
Output Enable High to
Output Hi-Z
E = VIL
30
40
tAXQX
tOH
Address Transition to
Output Transition
E = VIL,
G = VIL
0
0
tPLYH (1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
tPHEL
tRH
RP High to Chip Enable
Low
50
50
tPLPX
tELBL
tELBH
tBLQZ
tRP RP Pulse Width
tELFL Chip Enable to BYTE
tELFH Switching Low or High
tFLQZ
BYTE Switching Low to
Output High Z
500
500
5
5
60
60
tBHQV
tFHQV
BYTE Switching High to
Output Valid
60
60
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
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