M29W800T, M29W800B
Table 17A. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W800T / M29W800B
Sym-
bol
Parameter
-90
VCC = 3.0V to 3.6V
CL = 30pF
Min
Max
-100
VCC = 2.7V to 3.6V
CL = 30pF
Min
Max
tWHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
10
2400
10
2400
1.0
60
1.0
60
tEHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
10
2400
10
2400
1.0
60
1.0
60
tQ7VQV Q7 Valid to Output Valid (Data Polling)
Write Enable High to Output Valid (Program)
tWHQV
Write Enable High to Output Valid (Chip Erase)
35
40
10
2400
10
2400
1.0
60
1.0
60
Chip Enable High to Output Valid (Program)
tEHQV
Chip Enable High to Output Valid (Chip Erase)
Note: 1. All other timings are defined in Read AC Characteristics table.
10
2400
10
2400
1.0
60
1.0
60
Unit
ms
sec
µs
sec
ns
µs
sec
µs
sec
Table 17B. Data Polling and Toggle Bit AC Characteristics (1)
(TA = 0 to 70°C, –20 to 85°C or –40 to 85°C)
M29W800T / M29W800B
Sym-
bol
Parameter
-120
VCC = 2.7V to 3.6V
CL = 100pF
Min
Max
-150
VCC = 2.7V to 3.6V
CL = 100pF
Min
Max
Unit
tWHQ7V
Write Enable High to DQ7 Valid
(Program, W Controlled)
Write Enable High to DQ7 Valid
(Chip Erase, W Controlled)
10
2400
10
2400 ms
1.0
60
1.0
60
sec
tEHQ7V
Chip Enable High to DQ7 Valid
(Program, E Controlled)
Chip Enable High to DQ7 Valid
(Chip Erase, E Controlled)
10
2400
10
2400
µs
1.0
60
1.0
60
sec
tQ7VQV Q7 Valid to Output Valid (Data Polling)
Write Enable High to Output Valid (Program)
tWHQV
Write Enable High to Output Valid (Chip Erase)
50
55
ns
10
2400
10
2400
µs
1.0
60
1.0
60
sec
Chip Enable High to Output Valid (Program)
tEHQV
Chip Enable High to Output Valid (Chip Erase)
Note: 1. All other timings are defined in Read AC Characteristics table.
10
2400
10
2400
µs
1.0
60
1.0
60
sec
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