M36DR432-ZAT View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M36DR432-ZAT

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product

STMicroelectronics 

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M36DR432A, M36DR432B

Table 33. SRAM Low VCCS Data Retention Characteristics (1, 2)

(TA = –40 to 85°C; VDDS = 1.65V to 2.2V)

Symbol

Parameter

Test Condition

Min

IDDDR

Supply Current (Data Retention)

VDDS = 1.2V, E1S ≥ VDDS – 0.2V,

E2S ≥ VDDS – 0.2V or E2S ≤ 0.2V, f = 0

VDR Supply Voltage (Data Retention) E1S ≥ VDDS – 0.2V, E2S ≤ 0.2V, f = 0

1

tCDR Chip Disable to Power Down

E1S ≥ VCCS – 0.2V, E2S ≤ 0.2V, f = 0

0

tR

Operation Recovery Time

tRC

Note: 1. All other Inputs VIH ≤ VDD– 0.2V or VIL ≤ 0.2V.

2. Sampled only. Not 100% tested.

Figure 23. SRAM Low VDDS Data Retention AC Waveforms, E1S Controlled

Max Unit

10

µA

2.2

V

ns

ns

VDDS

1.65 V

1.2 V

VDR

E1S VSSS

tCDR

DATA RETENTION MODE

tR

E1S ≥ VDDS – 0.2V

AI90224

Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E2S Controlled

VDDS

1.65 V

E2S

VDR

0.4 V

VSSS

DATA RETENTION MODE

tCDR

tR

E2S ≤ 0.2V

AI90225

40/46

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