M36W416BG View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M36W416BG
STMicroelectronics
'M36W416BG' PDF : 62 Pages View PDF
M36W416TG, M36W416BG
Symbol
Parameter
Device
IPPE Program Current (Erase)
Flash
VIL Input Low Voltage
VIH Input High Voltage
Flash & SRAM
Flash & SRAM
VOL Output Low Voltage
Flash & SRAM
VOH Output High Voltage
Flash & SRAM
VPP1
Program Voltage
(Program or Erase
operations)
Program Voltage
VPPFH (Program or Erase
operations)
Program Voltage
VPPLK (Program and Erase lock-
out)
VLKO
VDDF Supply Voltage
(Program and Erase lock-
out)
Flash
Flash
Flash
Flash
Test Condition
VPPF = 12V ± 0.5V
Erase in progress
VPPF = VDDF
Erase in progress
VDDQF = VDDS ≥ 2.7V
VDDQF = VDDS ≥ 2.7V
VDDQF = VDDS = VDD min
IOL = 100µA
VDDQF = VDDS = VDD min
IOH = –100µA
Min Typ Max Unit
10 mA
–0.3
0.7
VDDQF
VDDQ
–0.1
5
µA
0.8
V
VDDQF
+0.3
V
0.1 V
V
1.65
3.6 V
11.4
12.6 V
1
V
2
V
14/62
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