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Part Name
Description
M36W832BE View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M36W832BE
32 Mbit (2Mb x16, Boot Block) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product
STMicroelectronics
'M36W832BE' PDF : 64 Pages
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M36W832TE, M36W832BE
Table 8. Flash Program, Erase Times and Program/Erase Endurance Cycles
Parameter
Test Conditions
Flash Device
Min
Typ
Max
Unit
Word Program
V
PPF
= V
DDF
10
200
µs
Double Word Program
V
PPF
= 12V ±5%
10
200
µs
Quadruple Word Program
V
PPF
= 12V ±5%
10
200
µs
Main Block Program
V
PPF
= 12V ±5%
V
PPF
= V
DDF
0.16/0.08
(1)
5
s
0.32
5
s
Parameter Block Program
V
PPF
= 12V ±5%
V
PPF
= V
DDF
0.02/0.01
(1)
4
s
0.04
4
s
Main Block Erase
V
PPF
= 12V ±5%
V
PPF
= V
DD
V
DDF
1
10
s
1
10
s
Parameter Block Erase
V
PPF
= 12V ±5%
V
PPF
= V
DDF
0.4
10
s
0.4
10
s
Program/Erase Cycles (per Block)
100,000
cycles
Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands
respectively.
20/64
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