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M36W832BE View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
'M36W832BE' PDF : 64 Pages View PDF
M36W832TE, M36W832BE
Table 8. Flash Program, Erase Times and Program/Erase Endurance Cycles
Parameter
Test Conditions
Flash Device
Min
Typ
Max
Unit
Word Program
VPPF = VDDF
10
200
µs
Double Word Program
VPPF = 12V ±5%
10
200
µs
Quadruple Word Program
VPPF = 12V ±5%
10
200
µs
Main Block Program
VPPF = 12V ±5%
VPPF = VDDF
0.16/0.08 (1)
5
s
0.32
5
s
Parameter Block Program
VPPF = 12V ±5%
VPPF = VDDF
0.02/0.01 (1)
4
s
0.04
4
s
Main Block Erase
VPPF = 12V ±5%
VPPF = VDDVDDF
1
10
s
1
10
s
Parameter Block Erase
VPPF = 12V ±5%
VPPF = VDDF
0.4
10
s
0.4
10
s
Program/Erase Cycles (per Block)
100,000
cycles
Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands
respectively.
20/64
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