M58BV016FT7T3T View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
MFG CO.
M58BV016FT7T3T
Numonyx -> Micron
'M58BV016FT7T3T' PDF : 70 Pages View PDF
DC and AC parameters
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
Table 15. DC characteristics
Symbol
Parameter
Test condition
Min
Max Unit
ILI Input Leakage current
ILO Output Leakage current
IDD Supply current (Random Read)
0 V≤ VIN ≤ VDDQ
0 V≤ VOUT ≤VDDQ
E = VIL, G = VIH, M58BW016DT/B
fadd = 6 MHz M58BW016FT/B
±1
µA
±5
µA
20
mA
25
IDDP-UP(1) Supply current (Power-up)
E = VIH
applies only to
M58BW016FT/B
20
mA
IDDB Supply current (Burst Read)
E = VIL, G = VIH, M58BW016DT/B
fclock = 40 MHz M58BW016FT/B
E = VIL, G = VIH, M58BW016DT/B
fclock = 56 MHz M58BW016FT/B
30
mA
30
mA
40
mA
Supply current (Standby)
IDD1
Supply current (Auto Low-Power)
E = RP = VDD ± M58BW016DT/B
0.2 V
M58BW016FT/B
E = VSS ± 0.2 V,
RP = VDD ± 0.2 V
IDD2 Supply current (Reset/Power-down)
RP = VSS ± 0.2 V
IDD3
Supply current (Program or Erase,
Set Lock bit, Erase Lock bit)
Program, Block Erase in progress
60
µA
150
µA
60
µA
60
µA
30
mA
IDD4
Supply current
(Erase/Program Suspend)
E = VIH
M58BW016DT/B
M58BW016FT/B
40
µA
150
µA
IPP Program current (Read or Standby)
IPP1 Program current (Read or Standby)
IPP2 Program current (Power-down)
IPP3
Program current (Program)
Program in progress
IPP4
Program current (Erase) Erase in
progress
VIL Input Low voltage
VIH Input High voltage (for DQ lines)
VIH
Input High voltage (for input only
lines)
VPP ≥ VPP1
VPP ≤ VPP1
RP = VIL
VPP = VPP1
VPP = VPPH
VPP = VPP1
VPP = VPPH
± 30 µA
± 30 µA
±5
µA
200
µA
20
mA
200
µA
20
mA
–0.5 0.2VDDQIN V
0.8VDDQIN VDDQ+0.3 V
0.8VDDQIN
3.6
V
VOL
VOH
VPP1
Output Low voltage
Output High voltage CMOS
Program voltage
(program or erase operations)
IOL = 100 µA
IOH = –100 µA
0.1
V
VDDQ–0.1
V
2.7
3.6
V
VPPH
Program voltage
(program or erase operations)
11.4
12.6
V
VLKO
VDD supply voltage (erase and
program lockout)
2.2
V
VPPLK
VPP supply voltage (erase and
program lockout)
11.4
V
1. IDDP-UP is defined only during the power-up phase of the M58BW016FT/B, from the moment current is applied with RP Low
to the moment when the supply voltage has become stable and RP is brought to High.
40/70
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