MC-4R96CPE6C View Datasheet(PDF) - NEC => Renesas Technology
Part Name
Description
MFG CO.
MC-4R96CPE6C
NEC => Renesas Technology
'MC-4R96CPE6C' PDF : 16 Pages View PDF
PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4R96CPE6C
Direct RambusTM DRAM RIMMTM Module
96M-BYTE (48M-WORD x 16-BIT)
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R96CPE6C modules consists of six 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448).
These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
• 184 edge connector pads with 1mm pad spacing
• 96 MB Direct RDRAM storage
• Each RDRAM® has 32 banks, for 192 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Low power and powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14806EJ2V0DS00 (2nd edition)
Date Published August 2000 NS CP (K)
The mark 5 shows major revised points.
Printed in Japan
©
2000
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