MCD310-16IO1 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'MCD310-16IO1' PDF : 4 Pages View PDF
Symbol
VRSUIDSU
VRRM/DHM
IR/D
VT
ITAV
IT(RMS)
VTD
FT
"thJC
"thCH
Ptot
ITSH
R
c,
PGAV
(dl/dtL
(dv/dt)w
VQT
IGT
»GD
'GO
IL
IH
tad
t<
Rating s
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VWD= 1600V
VWD = 1600V
forward voltage drop
IT = 300 A
I T = 600A
IT = 300 A
I T = 600 A
average forward current
Tc= 85 °C
RMS forward current
180° sine
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 140°C
TVJ = 25°C
TVJ = 125°C
TVJ = 140°C
mln. typ. max. : Unit
1700 V
1600 V
1 i mA
40 | mA
1.14: V
1 .32 V
1 .08 i V
1 .30 V
320 A
500 ; A
threshold voltage "1
,
.
> for power loss calculation only
slope resistance J
TVJ = 140°C
0.80 V
0.82 mD
thermal resistance junction to case
thermal resistance case to heatsink
0.11 i K/W
0.040
K/W
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
t = 10 ms; (50 Hz), sine
t = 8,3ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
Vfi= 400V f = 1 MHz
tp= 30 MS
tp= 500 MS
To = 25°C
TVJ = 45°C
0V
TVJ = 140°C
0V
TVJ = 45°C
0V
TVJ = 140°C
VB = 0 V
TVJ = 25°C
Tc = 140°C
1030 | W
9.20 kA
9.94 kA
7.82 ; kA
8.45 kA
423.2 kA2s
410.6 kA2s
305.8 i kA2s
296.7 | kA=s
438
| PF
120 W
60 W
average gate power dissipation
critical rate of rise of current
t Pnnne-rti /rit
repetitive, IT = 960 A
1 A/II--
20 W
100 iA/ns
critical rate of rise of voltage
|Q= 1 A ; V = % V D R M
V = % VDRU
non-repet., IT = 320 A
TVj = 140°C
500 i A/MS
1000: V/MS
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
RBK = ™; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25 °C
TVJ = -40 °C
VD = 6 V
TVJ = 25 °C
TVJ = -40 °C
VD= %VDRM
TVJ = 140°C
tp = 30 us
TVJ = 25 °C
2V
3V
150 mA
200 ! mA
0.25 i V
10 | mA
200 i mA
holding current
gate controlled delay time
turn-off time
IB = 0.45A; dia/dt = 0.45A/us
VD=6V RQK=»
TVJ = 25 °C
V0 = Vi VDRM
TVJ = 25 °C
IQ = 1A; dia/dt = 1 A/MS
VR = 100V; IT =320 A; V = %VDRM TVJ=1
di/dt= 10 A/us dv/dt = 50 V/MS tp = 200 as
150 i mA
2 | MS
200
i MS
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