MCD310-16IO1 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
MFG CO.
'MCD310-16IO1' PDF : 4 Pages View PDF
Symbol
UMS
TVJ
!„„
T«fl
Weight
MD
MT
dspp/App
dspb/Apb
V*OL
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Conditions
per terminal
mounting torque
terminal torque
creepage distance on surface / striking distance through air
terminal to terminal
terminal to backside
isolation voltage
t = 1 second
..
t = 1 minute
50/60 Hz, RMS; lisa. & 1 mA
Rating;5
min. typ. max. Unit
600 A
-40
140 °C
-40
125 °C
-40
125 °C
255
g
2.5
5 Nm
12
15 Nm
13.0
mm
13.0
mm
3600
V
3000
V
12000
5OHz. 80% "•«
10°
V.-OV
6UU
.DC
_^^^
/ ,120' JT-
10000
500
/ '="-"-
\ / // , 30'JT.
/v
8000
'TSU
|FSU 6000
[A]
4000
2000
\
5°C
s
k S \j = 140°(3
v
's s.
2t
n^s]
TVJ = 45°C,
'^
^TVJ - 140"C ^
400
'TAVM
300
[A]
200
100
/A //
"^™ ^LJ /_
/£
~/ £ ~*
YS^
"^ s^l
vi
lI l\
50
100
0 o-3 10*
10'1
10°
10'
10s
2
3 6 8 1o
0
c
t [s]
t [ms]
T rof*l
C L ^J
Fig.1 Surge overload current
IT(F)SM: crest value, t: duration
Fig. 2 Pt versus time (1-10 ms)
Fig. 3 Max. forward current
at case temperature
800
[KrtW]
600
PT
400
-7 ,
/ f f'
/
si >V /
[W]
200
S 'j[
4y ^ '&
V "~- ^^ ^~;-•——
^•~--
DC
180° sir
12o-
60°
30°
~>
i
100 200 300 400 500
IT*™, IFAVM [A]
r~- 0.2
/r -0.3
\ v/ Vr k
\ > //: X
- 0.4
//
- 0.5
\
'fr - 0.6
- 0.8
'//:
-1
;\.
m^<£•
— •«=
^
'/r - 1.4
^k.
0
50
^ ^100
1 SO
TA [°C]
Fig. 4 Power dissipation versus onstate current and*
ambient temperature (per thyristor/diode)
10
i«
: 7iz>l! i:r:
! _-!:.^ IT,,
l=,:Tl-25^;y
A
1
^k '
. . 3- .
'-•••-
•
^^ '"7
m
Ir
^ J l J(! ' VPaw- 20W
' 2:?™,- 60W
3:Pm-120W
0.1 1
t
TVJ. 25 C
T,j. 125C
0.01
O.C 01 0.01 0.1
1
a [A]
10 15
Fig. 5 Gate trigger characteristics
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