512Mb: x4, x8, x16 SDRAM
Electrical Specifications
Table 17: AC Functional Characteristics
Notes 5, 6, 7, 8, 9, and 11 apply to entire table; notes appear below
Parameter
Symbol -7E
READ/WRITE command-to-READ/WRITE command
tCCD
1
CKE to clock disable or power-down entry mode
tCKED
1
CKE to clock enable or power-down exit setup mode
tPED
1
DQM to input data delay
tDQD
0
DQM to data mask during WRITEs
tDQM
0
DQM to data High-Z during READs
tDQZ
2
WRITE command to input data delay
tDWD
0
Data-in to ACTIVE command
tDAL
4
Data-in to PRECHARGE command
tDPL
2
Last data-in to burst STOP command
tBDL
1
Last data-in to new READ/WRITE command
tCDL
1
Last data-in to PRECHARGE command
tRDL
2
LOAD MODE REGISTER command to ACTIVE or REFRESH command
tMRD
2
Data-out to High-Z from PRECHARGE command
CL = 3 tROH(3)
3
CL = 2 tROH(2)
2
-75 Units Notes
1
tCK
17
1
tCK
14
1
tCK
14
0
tCK
17
0
tCK
17
2
tCK
17
0
tCK
17
5
tCK
15, 21
2
tCK
16, 21
1
tCK
17
1
tCK
17
2
tCK
16, 21
2
tCK
26
3
tCK
17
2
tCK
17
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
46
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