MT48V4M32LFFF-8 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48V4M32LFFF-8' PDF : 61 Pages View PDF
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear on page 39)
PARAMETER
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
Data-out to high-impedance from PRECHARGE command
ADVANCE
128Mb: x16, x32
MOBILE SDRAM
CL = 3
CL = 2
CL = 1
SYMBOL
tCCD
tCKED
tPED
tDQD
tDQM
tDQZ
tDWD
tDAL
tDPL
tBDL
tCDL
tRDL
tMRD
tROH(3)
tROH(2)
tROH(1)
-8 -10 UNITS NOTES
1 1 tCK 17
1 1 tCK 14
1 1 tCK 14
0 0 tCK 17
0 0 tCK 17
2 2 tCK 17
0 0 tCK 17
5 5 tCK 15, 21
2 2 tCK 16, 21
1 1 tCK 17
1 1 tCK 17
2 2 tCK 16, 21
2 2 tCK 26
3 3 tCK 17
2 2 tCK 17
1 1 tCK 17
IDD SPECIFICATIONS AND CONDITIONS (x16)
(Notes: 1, 5, 6, 11, 13; notes appear on page 39; VDD = +3.3V ±0.3V or 2.5 ±0.2V, VDDQ = +3.3V ±0.3V or +2.5V
±0.2V or +1.8V ±0.15V )
MAX
PARAMETER/CONDITION
SYMBOL -8 -10 UNITS NOTES
Operating Current: Active Mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1
130 100 mA 3, 18,
19, 32
Standby Current: Power-Down Mode; All banks idle; CKE = LOW
IDD2
350 350 µA
32
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after tRCD met;
No accesses in progress
IDD3
35 30 mA 3, 12,
19, 32
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
IDD4
tRFC = tRFC (MIN)
IDD5
tRFC = 15.625µs
IDD6
100 95
210 170
33
mA 3, 18,
19, 32
mA 3, 12,
mA 18, 19,
32, 33
IDD7 - SELF REFRESH CURRENT OPTIONS (x16)
(Notes: Note 4 appears on page 39) (VDD = +3.3V ±0.3V or 2.5 ±0.2V, VDDQ) = +3.3V ±0.3V or +2.5V ±0.2V or
+1.8V ±0.15V)
Temperature Compensated Self Refresh
Parameter/Condition
Self Refresh Current:
CKE < 0.2V
Max
Temperature
85ºC
70ºC
45ºC
15ºC
-8 and -10
800
500
350
300
UNITS NOTES
µA
4
µA
4
µA
4
µA
4
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
37
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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