MT48V4M32LFFF-8 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48V4M32LFFF-8' PDF : 61 Pages View PDF
ADVANCE
128Mb: x16, x32
MOBILE SDRAM
IDD SPECIFICATIONS AND CONDITIONS (x32)
(Notes: 1, 5, 6, 11, 13; notes appear on page 39; VDD = +3.3V ±0.3V or 2.5 ±0.2V, VDDQ = +3.3V ±0.3V or +2.5V
±0.2V or +1.8V ±0.15V )
MAX
PARAMETER/CONDITION
SYMBOL -8 -10 UNITS NOTES
Operating Current: Active Mode;
Burst = 2; READ or WRITE; tRC = tRC (MIN)
IDD1
150 120 mA 3, 18,
19, 32
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
IDD2
350 350 µA
32
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after tRCD met;
No accesses in progress
IDD3
40 35 mA 3, 12,
19, 32
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
IDD4
tRFC = tRFC (MIN)
IDD5
tRFC = 15.625µs
IDD6
115 110
220 180
33
mA 3, 18,
19, 32
mA 3, 12,
mA 18, 19,
32, 33
IDD7 - SELF REFRESH CURRENT OPTIONS (x32)
(Notes: Note 4 appears on page 39) (VDD = +3.3V ±0.3V or 2.5 ±0.2V, VDDQ) = +3.3V ±0.3V or +2.5V ±0.2V or
+1.8V ±0.15V)
Temperature Compensated Self Refresh
Parameter/Condition
Self Refresh Current:
CKE < 0.2V
Max
Temperature
85ºC
70ºC
45ºC
15ºC
-8 and -10
1000
550
400
350
UNITS NOTES
µA
4
µA
4
µA
4
µA
4
CAPACITANCE
(Note: 2; notes appear on page 39)
PARAMETER
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
SYMBOL
CI1
CI2
CIO
MIN
2.5
2.5
4.0
MAX
3.5
3.8
6.0
UNITS NOTES
pF
29
pF
30
pF
31
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
38
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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