MT55L256L36PF-7.5 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT55L256L36PF-7.5' PDF : 30 Pages View PDF
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(Note 1) (0°C ≤ TA ≤ +70°C; VDD = +3.3V ±0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYMBOL TYP -6
Power Supply
Device selected; All inputs ≤ VIL
Current: Operating or ≥ VIH; Cycle time ≥ tKC (MIN);
VDD = MAX; Outputs open
IDD
200 500
Power Supply
Current: Idle
Device selected; VDD = MAX;
CKE# ≥ VIH;
IDD1
10
25
All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time ≥ tKC (MIN)
CMOS Standby
Device deselected; VDD = MAX;
All inputs ≤ VSS + 0.2 or ≥ VDD - 0.2;
ISB2
All inputs static; CLK frequency = 0
0.5 10
TTL Standby
Device deselected; VDD = MAX;
All inputs ≤ VIL or ≥ VIH;
ISB3
All inputs static; CLK frequency = 0
6
25
Clock Running
Device deselected; VDD = MAX;
ADV/LD# ≥ VIH; All inputs ≤ VSS + 0.2 ISB4
or ≥ VDD - 0.2; Cycle time ≥ tKC (MIN)
45 120
Snooze Mode
ZZ ≥ VIH
ISB2Z
0.5
10
MAX
-7.5
400
25
10
25
75
10
-10 UNITS NOTES
300 m A 2, 3, 4
20 m A 2, 3, 4
10 m A 3, 4
25 m A 3, 4
60 m A 3, 4
10 mA
4
TQFP THERMAL RESISTANCE
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
CONDITIONS
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
SYMBOL TYP
θJA
40
UNITS NOTES
°C/W 5
θJC
8
°C/W 5
BGA THERMAL RESISTANCE
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
CONDITIONS
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51.
SYMBOL
θJA
θJC
TYP UNITS NOTES
40 °C/W 5
9
°C/W 5
NOTE: 1. VDDQ = +3.3V ±0.165V for 3.3V I/O configuration; VDDQ = +2.5V +0.4V/-0.125V for 2.5V I/O
configuration.
2. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
3. “Device deselected” means device is in a deselected cycle as defined in the truth table. “Device selected” means device
is active (not in deselected mode).
4. Typical values are measured at +3.3V, +25°C and 10ns cycle time.
5. This parameter is sampled.
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_2.p65 – Rev. 6/01
21
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
Share Link: 
