P1N120 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
P1N120
STMicroelectronics
'P1N120' PDF : 10 Pages View PDF
STP1N120
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (1)
Drain-source voltage (VGS=0)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Derating factor
PTOT Total dissipation at TC = 25°C
dv/dt (2) Peak diode recovery voltage slope
Tj
Operating junction temperature
Tstg
Storage temperature
1. Pulse width limited by safe operating area
2. ISD ≤1A, di/dt ≤200A/µs, VDD ≤960
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb (1) Thermal resistance junction-amb max
Tl
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 3. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, ID=IAS, VDD= 50V)
Electrical ratings
Value
1200
± 30
500
315
2
0.36
45
Tbd
-55 to 150
Unit
V
V
mA
mA
A
W/°C
W
V/ns
°C
Value
2.78
62.5
300
Unit
°C/W
°C/W
°C
Max value
Unit
Tbd
A
Tbd
mJ
3/10
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