P1N120 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
P1N120
STMicroelectronics
'P1N120' PDF : 10 Pages View PDF
STP1N120
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Tbd
Min. Typ. Max. Unit
Tbd
ns
Tbd
ns
Tbd
ns
Tbd
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
Source-drain current
Source-drain current (pulsed)
VSD(1) Forward on voltage
ISD=1A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=1A, VDD=100V
di/dt = 50A/µs,Tj=25°C
(see Figure 6)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=1A,VDD=100V
di/dt=50A/µs,Tj=150°C
(see Figure 6)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ. Max Unit
500 mA
2
A
Tbd V
Tbd
ns
Tbd
nC
Tbd
A
Tbd
ns
Tbd
nC
Tbd
A
Table 8. Gate-source zener diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
BVGSO (1) Gate-source breakdown voltage Igs ± 1mA, (open drain) 30
V
1. The built-in-back zener diodes have specifically been designed to enhance not only the device’s ESD
capability, but also to make them safely absorb possibile voltage transients that may occasionally be
applied from gate to source. In this respect the zener voltage is appropriate to achieve an efficient and ost-
effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the usage
of external components.
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