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P4N150 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
'P4N150' PDF : 16 Pages View PDF
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Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, VGS = 0
ISD = 4 A,
di/dt = 100A/µs
VDD = 45V
(see Figure 21)
ISD = 4 A,
di/dt = 100 A/µs
VDD = 45V, Tj = 150°C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
4
A
12 A
2
V
510
ns
3
µC
12
A
615
ns
4
µC
12.6
A
5/16
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