Preliminary P521-39
Low Phase Noise LVDS VCXO (65MHz to 130MHz)
ELECTRICAL SPECIFICATIONS
1. Absolute Maximum Ratings
PARAMETERS
SYMBOL
MIN.
MAX.
UNITS
Supply Voltage
Input Voltage, dc
Output Voltage, dc
VDD
7
V
VI
VSS-0.5
VDD+0.5
V
VO
VSS-0.5
VDD+0.5
V
Storage Temperature
TS
-65
150
°C
Ambient Operating Temperature
TA
0
70
°C
Junction Temperature
TJ
125
°C
Lead Temperature (soldering, 10s)
260
°C
Input Static Discharge Voltage Protection
2
kV
Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended periods may cause permanent damage to the
device and affect product reliability. These conditions represent a stress rating only, and functional operations of the device at these or any other
conditions above the operational limits noted in this specification is not implied.
2. Crystal Specifications
PARAMETERS
SYMBOL
CONDITIONS
Crystal Resonator Frequency
Crystal Loading Rating
Interelectrode Capacitance
Crystal Pullability
Recommended ESR
FXIN
CL (xtal)
C0
C0/C1 (xtal)
RE
Parallel Fundamental Mode
Die at VCON = 1.65V
AT cut
AT cut
MIN.
65
TYP.
7.5
MAX.
130
3.5
250
30
UNITS
MHz
pF
pF
-
Ω
3. Voltage Control Crystal Oscillator
PARAMETERS
SYMBOL
CONDITIONS
MIN. TYP. MAX. UNITS
VCXO Stabilization Time *
VCXO Tuning Range
CLK output pullability
On-chip Varicaps control range
Linearity
VCXO Tuning Characteristic
TVCXOSTB
From power valid
XTAL C0/C1 < 250
0V ≤ VCON ≤ 3.3V
at room temperature
VCON = 0 to 3.3V
10
ms
250*
ppm
±80*
ppm
4 – 18*
pF
4*
5*
%
65
ppm/V
VCON input impedance
VCON modulation BW
60
kΩ
0V ≤ VCON ≤ 3.3V, -3dB
25
kHz
Note: Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits.
47745 Fremont Blvd., Fremont, California 94538 TEL (510) 492-0990 FAX (510) 492-0991
Rev 3/02/04 Page 3