PD55035-E View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
PD55035-E
STMicroelectronics
'PD55035-E' PDF : 22 Pages View PDF
PD55035-E
PD55035S-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 35W with 16.9dB gain @ 500MHz /
12.5V
■ New RF plastic package
Description
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. PD55035 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first
true SMD plastic RF power package,
PowerSO-10RF. PD55035’s superior linearity
performance makes it an ideal solution for car
mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of
assembly.
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Pin connection
Source
Gate
Drain
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Order codes
Part number
Package
PD55035-E
PD55035S-E
PD55035TR-E
PD55035STR-E
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
Packing
Tube
Tube
Tape and reel
Tape and reel
May 2006
Rev 1
1/22
www.st.com
22
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