PHP13N40E View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP13N40E' PDF : 10 Pages View PDF
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP13N40E, PHB13N40E, PHW13N40E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
EAR
IAS, IAR
Non-repetitive avalanche Unclamped inductive load, IAS = 13.6 A;
energy
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
Repetitive avalanche energy2
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V
IAR = 13.7 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
705
18
13.7
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
-
- 0.8 K/W
SOT78 package, in free air
- 60 - K/W
SOT429 package, in free air
- 45 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
∆V(BR)DSS / Drain-source breakdown
∆Tj
voltage temperature
coefficient
VDS = VGS; ID = 0.25 mA
RDS(ON)
VGS(TO)
gfs
IDSS
IGSS
Drain-source on resistance VGS = 10 V; ID = 6.5 A
Gate threshold voltage
VDS = VGS; ID = 0.25 mA
Forward transconductance VDS = 30 V; ID = 6.5 A
Drain-source leakage current VDS = 400 V; VGS = 0 V
VDS = 320 V; VGS = 0 V; Tj = 125 ˚C
Gate-source leakage current VGS = ±30 V; VDS = 0 V
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 13 A; VDD = 320 V; VGS = 10 V
td(on)
Turn-on delay time
tr
Turn-on rise time
td(off)
Turn-off delay time
tf
Turn-off fall time
VDD = 200 V; RD = 15 Ω;
RG = 5.6 Ω
Ld
Internal drain inductance Measured from tab to centre of die
Ld
Internal drain inductance Measured from drain lead to centre of die
(SOT78 package only)
Ls
Internal source inductance Measured from source lead to source
bond pad
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
400 -
-
V
- 0.1 - %/K
- 0.26 0.35 Ω
2.0 3.0 4.0 V
4 7.5 -
S
-
1 25 µA
- 50 500 µA
- 10 200 nA
- 79 100 nC
- 7.2 12 nC
- 43 55 nC
- 16 - ns
- 40 - ns
- 100 - ns
- 42 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 1283 - pF
- 218 - pF
- 120 - pF
2 pulse width and repetition rate limited by Tj max.
December 1998
2
Rev 1.000
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