PHP13N40E View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PHP13N40E' PDF : 10 Pages View PDF
Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Product specification
PHP13N40E, PHB13N40E, PHW13N40E
Gate-source voltage, VGS (V)
15
14 ID = 13A
13
12
Tj = 25 C
11
200V
10
9
100 V
8
7
6
5
4
3
2
1
0
VDD=320V
0
20
40
60
80
Gate charge, QG (nC)
PHP13N40E
100
120
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
Source-Drain Diode Current, IF (A)
20
PHP13N40E
18
16
14
12
10
8
150 C
Tj = 25 C
6
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
Drain-Source Voltage, VSDS (V)
Fig.16. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
Switching times, td(on), tr, td(off), tf (ns)
450
VDD = 200V
400
RD = 15 Ohms
350
PHP13N40E
td(off)
300
250
200
tf
150
tr
100
50
td(on)
0
0
10
20
30
40
50
Gate resistance, RG (Ohms)
Fig.14. Typical switching times; td(on), tr, td(off), tf = f(RG)
Normalised Drain-source breakdown voltage
1.15
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
1.1
1.05
1
0.95
0.9
0.85
-100
-50
0
50
100
150
Tj, Junction temperature (C)
Fig.15. Normalised drain-source breakdown voltage;
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
Non-repetitive Avalanche current, IAS (A)
100
PHP13N40E
Tj prior to avalanche = 25 C
10
VDS
tp
ID
125 C
1
1E-06
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.17. Maximum permissible non-repetitive
avalanche current (IAS) versus avalanche time (tp);
unclamped inductive load
Maximum Repetitive Avalanche Current, IAR (A)
100
Tj prior to avalanche = 25 C
10
125 C
1
0.1
1E-06
PHP13N40E
1E-05
1E-04
1E-03
Avalanche time, tp (s)
1E-02
Fig.18. Maximum permissible repetitive avalanche
current (IAR) versus avalanche time (tp)
December 1998
6
Rev 1.000
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