Monitoring and protections
PM6685
Table 16. Dual MOSFET manufacturer
Manufacturer
Type
RDSon (mΩ) Gate charge (nC)
ST
STS8DNH3LL
25
10
ST
STS4DNF60L
65
32
Rated reverse
voltage (V)
30
60
A rectifier across the low side MOSFET is recommended. The rectifier works as a voltage
clamp across the synchronous rectifier and reduces the negative inductor swing during the
dead time between turning the high-side MOSFET off and the synchronous rectifier on. It
can increase the efficiency of the switching section, since it reduces the low side switch
losses. A schottky diode is suitable for its low forward voltage drop (0.3V). The diode reverse
voltage must be greater than the maximum input voltage VINmax. A minimum recovery
reverse charge is preferable. Below there is a list of some schottky diode manufacturers.
Table 17. Schottky diode manufacturer
Manufacturer
Series
Forward voltage
(V)
ST
STPS1L30M
0.34
ST
STPS1L20M
0.37
Rated reverse
voltage (V)
30
20
Reverse current
(uA)
0.00039
0.000075
8.11
Closing the integrator loop
The design of external feedback network depends on the output voltage ripple. If the ripple
is higher than approximately 30mV, the feedback network (Figure 36) is usually enough to
keep the loop stable.
Figure 36. Circuitry for output ripple compensation
COMP PIN
VOLTAGE
∆V
Vr
t
OUTPUT VOLTAGE
∆V
t
L
COMP
CFILT
CINT
RINT
VCINT
OUT
I=gm(V1-Vr)
Vr
+
gm
+
Vr V1
RFb1
- PWM
Comparator
RFb2
ROUT
D
COUT
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