SC401BEVB View Datasheet(PDF) - Semtech Corporation
Part Name
Description
MFG CO.
'SC401BEVB' PDF : 32 Pages View PDF
SC401B
Applications Information (continued)
tion mode operation. Figure 6 shows typical waveforms
for the Smart Power Save feature.
SmartDriveTM
For each DH pulse the DH driver initially turns on the high-
side MOSFET at a lower speed, allowing a softer, smooth
turn-off of the low-side diode. Once the diode is off and
the LX voltage has risen 0.5V above PGND, the SmartDrive
circuit automatically drives the high-side MOSFET on at a
rapid rate. This technique reduces switching losses while
maintaining high efficiency and also avoids the need for
snubbers or series resistors in the gate drive.
VOUT drifts up to due to leakage
current flowing into COUT
Smart Power Save
Threshold
FB
threshold
DH and DL off
High-side
Drive (DH)
Single DH on-time pulse
after DL turn-off
Low-side
Drive (DL)
DL turns on when Smart
PSAVE threshold is reached
DL turns off when FB
threshold is reached
VOUT discharges via inductor
and low-side MOSFET
Normal VOUT ripple
Normal DL pulse after DH
on-time pulse
Figure 6 — Smart Power Save
Current Limit Protection
The device features programmable current limiting, which
is accomplished by using the RDSON of the lower MOSFET
for current sensing. The current limit is set by RILIM resistor.
The RILIM resistor connects from the ILIM pin to the LXS pin
which is also the drain of the low-side MOSFET. When the
low-side MOSFET is on, an internal ~10μA current flows
from the ILIM pin and through the RILIM resistor, creating a
voltage drop across the resistor. While the low-side
MOSFET is on, the inductor current flows through it and
creates a voltage across the RDSON. The voltage across the
MOSFET is negative with respect to ground. If this MOSFET
voltage drop exceeds the voltage across RILIM, the voltage
at the ILIM pin will be negative and current limit will acti-
vate. The current limit then keeps the low-side MOSFET on
and will not allow another high-side on-time, until the
current in the low-side MOSFET reduces enough to bring
the ILIM voltage back up to zero. This method regulates
the inductor valley current at the level shown by ILIM in
Figure 7.
IPEAK
ILOAD
ILIM
Time
Figure 7 — Valley Current Limit
Setting the valley current limit to 15A results in a peak
inductor current of 15A plus peak ripple current. In this
situation, the average (load) current through the inductor
is 15A plus one-half the peak-to-peak ripple current.
The internal 10μA current source is temperature compen-
sated at 4100ppm in order to provide tracking with the
RDSON.
The RILIM value is calculated by the following equation.
RILIM = 495 x ILIM x [0.0647 x (5V - VDD) +1]
When selecting a value for RILIM be sure not to exceed the
absolute maximum voltage value for the ILIM pin. Note
that because the low-side MOSFET with low RDSON is used
for current sensing, the PCB layout, solder connections,
and PCB connection to the LX node must be done care-
fully to obtain good results. RILIM should be connected
directly to LXS (pin 28).
Soft-Start of PWM Regulator
SC401B has a programmable soft-start time that is con-
trolled by an external capacitor at the SS pin. After the
controller meets both UVLO and EN/PSV thresholds, the
controller has an internal current source of 3µA flowing
through the SS pin to charge the capacitor. During the
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