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ST72P314J2T View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
'ST72P314J2T' PDF : 153 Pages View PDF
ST72334J/N, ST72314J/N, ST72124J
8.5 I/O PORT CHARACTERISTICS
Recommended operating conditions
with TA=-40 to +85oC and 4.5V<VDD-VSS<5.5V unless otherwise specified.
I/O PORT PINS
Symbol
VIL
VIH
VHYS
VOL
VOH
RPU
IL
ISV
IPINJ
IINJ
tOHL
tOLH
tITEXT
Parameter
Conditions
Input low level voltage 2)
Input high level voltage 2)
Schmitt trigger voltage hysteresis 3)
3V<VDD-VSS<5.5V
Output low level voltage
for Standard I/O port pins
I=-5mA
I=-2mA
Output low level voltage
for high sink I/O port pins
I=-20mA
I=-8mA
Output high level voltage
I=-5mA
I=-2mA
Pull-up equivalent resistor
Input leakage current
Static current consumption 2)
Single pin injected current
Total injected current 7)
(sum of all I/O and control pins)
Output high to low level fall time
Output low to high rise time
External interrupt pulse time 8)
VIN > VIH
VIN < VIL
VSS<VPIN<VDD
Floating input mode
Positive 5): VEXT>VDD
Negative 6): VEXT<VSS
Positive: VEXT>VDD
Negative: VEXT<VSS
Cl=50pF
Min
Typ 1)
0.7xVDD
400
VDD-2.0
VDD-0.8
20
35
60
100
14.8 4)
25
14.4 4)
25
1
Max
0.3xVDD
1.3
0.5
1.3
0.5
50
140
1
200
5
-5
tbd
tbd
45.6 4)
45.9 4)
Unit
V
mV
V
k
µA
mA
ns
tCPU
Notes:
1) Unless otherwise specified, typical data are based on TA=25°C and VDD-VSS=5V. They are given only as design guide-
lines and are not tested.
2) Data based on design simulation and/or technology characteristics, not tested in production.
3) Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4) Data based on characterization results, not tested in production.
5) Positive injection (IINJ+)
The IINJ+ is performed through protection diodes insulated from the substrate of the die.
The true open-drain pins do not accept positive injection. In this case the maximum voltage rating must be respected.
6) ADC accuracy reduced by negative injection (IINJ- )
The IINJ- is performed through protection diodes NOT INSULATED from the substrate of the die. The drawback is a small
leakage (a few µA) induced inside the die when a negative injection is performed. This leakage is tolerated by the digital
structure, but it acts on the analog line depending on the impedance versus a leakage current of a few µA (if the MCU
has an AD converter). The effect depends on the pin which is submitted to the injection. Of course, external digital signals
applied to the component must have a maximum impedance close to 50K.
Location of the negative current injection:
- Pins with analog input capability are the most sensitive. IINJ- maximum is 0.8 mA (assuming that the impedance of the
analog voltage is lower than 25K)
- Pure digital pins can tolerate 1.6mA. In addition, the best choice is to inject the current as far as possible from the analog
input pins.
7) When several inputs are submitted to a current injection, the maximum IINJ is the sum of the positive (or negative) cur-
rents (instantaneous values). These results are based on characterisation with IINJ maximum current injection on four I/
O port pins of the device.
8) To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
108/125
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