STB11NM60 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STB11NM60
STMicroelectronics
'STB11NM60' PDF : 12 Pages View PDF
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Maximum Lead Temperature For Soldering Purpose
TO-220/D2PAK/I2PAK
0.78
62.5
300
TO-220FP
3.57
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
5.5
350
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.5A
Min. Typ. Max. Unit
3
4
5
V
0.4
0.45
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 5.5A
5.2
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1000
pF
Coss
Output Capacitance
230
pF
Crss
Reverse Transfer
Capacitance
25
pF
Coss eq. (2) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 480V
100
pF
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.6
Ω
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
2/12
Share Link: 