STB155N3H6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STB155N3H6
STMicroelectronics
'STB155N3H6' PDF : 18 Pages View PDF
STB155N3H6
STD155N3H6
N-channel 30 V, 2.5 mĪ© , 80 A, DĀ²PAK, DPAK
STripFETā¢ VI DeepGATEā¢ Power MOSFET
Features
Order codes
STB155N3H6
STD155N3H6
VDSS
30 V
30 V
RDS(on) max
< 3 mĪ©
< 3 mĪ©
ID
80 A (1)
80 A (1)
1. Limited by wire bonding
ā RDS(on) * Qg industry benchmark
ā Extremely low on-resistance RDS(on)
ā High avalanche ruggedness
Application
ā Switching applications
ā Automotive
Description
These devices are 30 V N-channel Power
MOSFETs realized using ST`s proprietary
STripFETā¢ VI technology. The resulting Power
MOSFET exhibits the lowest RDS(on) in all
packages.
3
1
DPAK
3
1
DĀ²PAK
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary
Order codes
STB155N3H6
STD155N3H6
Marking
155N3H6
S(3)
AM01474v1
Package
DĀ²PAK
DPAK
Packaging
Tape and reel
May 2011
Doc ID 018793 Rev 2
1/
www.st.com
18
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