STB35NF10 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STB35NF10
STMicroelectronics
'STB35NF10' PDF : 14 Pages View PDF
STB35NF10 - STP35NF10
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
Gate- source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM(1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25°C
Derating Factor
dv/dt (2)
Peak diode recovery voltage slope
EAS (3)
Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤35A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
3. Starting Tj = 25 °C, ID = 20A, VDD = 80V
Value
100
100
± 20
40
28
160
115
0.77
13
300
-55 to 175
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
1.30
Rthj-amb Thermal resistance junction-ambient max
62.5
TJ
Maximum lead temperature for soldering purpose
300
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
°C/W
°C/W
°C
3/14
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