STB35NF10 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STB35NF10

N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

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STB35NF10 - STP35NF10

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

trr

Qrr

IRRM

Source-drain current

Source-drain current

(pulsed)

Forward on voltage

ISD = 35A, VGS = 0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 35A,

di/dt = 100A/µs,

VDD = 25V, Tj = 150°C

(see Figure 14)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

40

A

160 A

1.5 V

160

ns

720

nC

9

A

5/14

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