STL12N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL12N65M5
STMicroelectronics
'STL12N65M5' PDF : 17 Pages View PDF
STL12N65M5
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VDS Drain-source voltage
VGS Gate-source voltage
(1)
ID
Drain current (continuous) at TC = 25 °C
(1)
ID
Drain current (continuous) at TC = 100 °C
(1),(2)
IDM
Drain current (pulsed)
(1)
PTOT Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-
IAR repetitive (pulse width limited by Tj max)
EAS
(3)
dv/dt
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area.
3. ISD ≤ 8.5 A, di/dt ≤ 400 A/μs, VPeak ≤ V(BR)DSS, VDD = 400 V.
650
± 25
8.5
4
34
48
1.9
130
15
- 55 to 150
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Value
2.6
59
Unit
V
V
A
A
A
W
A
mJ
V/ns
°C
°C
Unit
°C/W
°C/W
DocID17450 Rev 4
3/17
Share Link: 