STL12N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL12N65M5
STMicroelectronics
'STL12N65M5' PDF : 17 Pages View PDF
Electrical characteristics
2
Electrical characteristics
STL12N65M5
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
(VGS = 0)
ID = 1 mA
Zero gate voltage
VDS = 650 V
IDSS
drain current (VGS = 0) VDS = 650 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source on-
RDS(on) resistance
VGS = 10 V, ID = 4.25 A
Min. Typ. Max. Unit
650
V
1 μA
100 μA
± 100 nA
3
4
5V
0.475 0.530 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 644 - pF
-
18
- pF
-
2.5
- pF
(1)
Co(tr)
Equivalent
capacitance time
related
Equivalent
(2)
Co(er) capacitance energy
related
VDS = 0 to 520 V, VGS = 0
-
55
- pF
-
17
- pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
-
5
-
Ω
Qg Total gate charge
VDD = 520 V, ID = 4.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
-
17
- nC
-
4.6
- nC
-
8.5
- nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/17
DocID17450 Rev 4
Share Link: 