STL22NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 50 V
ID = 11 A
20
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 10 V
45
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 80V ID= 22A VGS=10V
30
40
nC
6
nC
10
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 50 V
ID = 11 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
45
10
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
VSD (7) Forward On Voltage
ISD = 22 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =22 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
(1) The value is rated according Rthj-F.
(2) The value is rated according Rthj-pcb.
(3) Pulse width limited by safe operating area.
(4) When Mounted on FR-4 Board of 1 inch², 2 oz Cu, t<10s.
(5) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(6) Starting Tj = 25 oC, ID = 11 A, VDD = 30V.
(7) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
100
375
7.5
Max.
5.3
22
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8