Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

STL260N3LLH6 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
'STL260N3LLH6' PDF : 15 Pages View PDF
1 2 3 4 5 6 7 8 9 10 Next
STL260N3LLH6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
VGS=0, ISD = 45 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45 A,
di/dt = 100 A/µs,
VDD=25 V
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%.
Min. Typ. Max. Unit
-
45 A
-
180 A
-
1.1 V
- 37.2
ns
-
36
nC
- 1.9
A
DocID026659 Rev 2
5/15
15
Share Link: GO URL

All Rights Reserved © qdatasheet.com  [ Privacy Policy ] [ Contact Us ]