STL57N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL57N65M5
STMicroelectronics
'STL57N65M5' PDF : 16 Pages View PDF
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 17.5 A
STL57N65M5
Min. Typ. Max. Unit
650
V
1 µA
100 µA
±100 nA
3
4
5
V
0.061 0.069 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
4200
pF
-
100
- pF
6
pF
Co(er)(1)
Co(tr)(2)
Equivalent output
capacitance energy
related
Equivalent output
capacitance time
related
VGS = 0,
VDS = 0 to 80% V(BR)DSS
-
97
- pF
-
344
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.4
-
Ω
Qg Total gate charge
VDD = 520 V, ID = 17.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 15)
96
nC
-
24
- nC
40
nC
1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS
2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS
4/16
Doc ID 022996 Rev 2
Share Link: 