STL57N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL57N65M5
STMicroelectronics
'STL57N65M5' PDF : 16 Pages View PDF
STL57N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(V)
tr (V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 22.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Min. Typ. Max. Unit
84
ns
10.8
ns
-
-
11
ns
16.5
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD(1) Source-drain current
ISDM (1)(2) Source-drain current (pulsed)
-
VSD (3) Forward on voltage
ISD = 22.5 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22.5 A, di/dt = 100 A/µs -
VDD = 100 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 22.5 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
-
(see Figure 16)
1. The value is rated according to Rthj-case and limited by package
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
22.5 A
90 A
1.5 V
378
ns
7
µC
37
A
454
ns
9.5
µC
42
A
Doc ID 022996 Rev 2
5/16
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