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STM8S105S6B6CTR View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
'STM8S105S6B6CTR' PDF : 121 Pages View PDF
STM8S105xx
Electrical characteristics
Symbol Parameter
Accuracy of HSI
oscillator (factory
calibrated)
Conditions
Min
VDD = 5 V, TA = 25°C(3) -1.0
VDD = 5 V, 25 °C ≤ TA ≤ -2.0
85 °C
Typ Max Unit
1.0
2.0
2.95 ≤ VDD≤ 5.5 V,-40 °C -3.0(3)
≤ TA ≤ 125 °C
tsu(HSI) HSI oscillator
wakeup time
including calibration
3.0(3)
1.0(2) µs
IDD(HSI) HSI oscillator power
consumption
170 250(3) µA
(1) Refer to application note.
(2) Guaranteed by design, not tested in production.
(3) Data based on characterization results, not tested in production.
Figure 21: Typical HSI accuracy at VDD = 5 V vs 5 temperatures
DocID14771 Rev 9
79/127
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