STPS10L60CF View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS10L60CF' PDF : 5 Pages View PDF
STPS10L60CF/CFP
THERMAL RESISTANCE
Symbol
Rth (j-c)
Rth (c)
Parameter
Junction to case ISOWATT220AB TO-220FPAB
Per Diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
4.5
3.5
2.5
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR * Reverse leakage current
Tests conditions
Tj = 25°C
VR = VRRM
VF * Forward voltage drop
Tj = 125°C
Tj = 25°C
IF = 5 A
Tj = 125°C
Tj = 25°C
IF = 5 A
IF = 10 A
Tj = 125°C IF = 10 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.4x IF(AV) + 0.024 IF2(RMS)
Min. Typ. Max. Unit
220 µA
45 60 mA
0.55
V
0.43 0.52
0.67
0.55 0.64
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
3.5
δ = 0.1
δ = 0.2
δ = 0.5
3.0
δ = 0.05
δ=1
2.5
2.0
1.5
1.0
T
0.5
IF(av) (A)
δ=tp/T
tp
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
6
5
Rth(j-a)=Rth(j-c)
4
3
Rth(j-a)=15°C/W
2
T
1
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100
125
150
2/5
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