STPS10L60CF View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS10L60CF' PDF : 5 Pages View PDF
STPS10L60CF/CFP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
90
80
70
60
50
40
30
20 IM
10
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 6: Relative variation of thermal transient
impedance junction to case versus pulse duration.
(ISOWATT220AB, TO-220FPAB).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2
δ = 0.1
Single pulse
0.0
1E-3
1E-2
T
tp(s)
1E-1
δ=tp/T
1E+0
tp
1E+1
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
IR(mA)
3E+2
1E+2
Tc=150°C
1E+1
1E+0
1E-1
1E-2
1E-3
0
Tc=125°C
Tc=100°C
Tc=75°C
Tc=50°C
Tc=25°C
VR(V)
5 10 15 20 25 30 35 40 45 50 55 60
C(pF)
1000
500
200
100
1
F=1MHz
Tj=25°C
VR(V)
10
100
3/5
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