STPS160H100TV View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS160H100TV' PDF : 5 Pages View PDF
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
80
70
δ = 0.1 δ = 0.2
δ = 0.05
60
50
40
30
20
10
IF(av) (A)
0
0
20
40
60
δ = 0.5
δ=1
T
δ=tp/T
80
tp
100
STPS160H100TV
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
100
80
Rth(j-a)=Rth(j-c)
60
Rth(j-a)=2°C/W
40
T
20
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100 125 150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5: Non repetitive surge peak forward current ver-
sus overload duration (maximum values, per diode).
IM(A)
600
500
400
300
200
IM
100
t
δ=0.5
0
1E-3
1E-2
t(s)
1E-1
Tc=50°C
Tc=90°C
1E+0
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
5E+0
3/5
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