STPS2L60-Y View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS2L60-Y' PDF : 7 Pages View PDF
Characteristics
1
Characteristics
STPS2L60-Y
Table 2.
Symbol
Absolute ratings (limiting values)
Parameter
Value
VRRM Repetitive peak reverse voltage
60
IF(RMS) Forward rms voltage
10
IF(AV) Average forward current
TL = 115 °C δ = 0.5
2
IFSM Surge non repetitive forward current
tp =10 ms sinusoidal
75
PARM Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
1600
Tstg Storage temperature range
Tj Operating junction temperature range(1)
-65 to +150
-40 to +150
dV/dt Critical rate of rise of reverse voltage
10000
1.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Test conditions
Value
Rth(j-l) Junction-lead
25
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min. Typ. Max.
IR(1)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
Tj = 100 °C
VF(1)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 2 A
IF = 4 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.43 x IF(AV) + 0.06 IF2(RMS)
100
2
10
0.60
0.51 0.55
0.77
0.62 0.67
Unit
V
A
A
A
W
°C
°C
V/µs
Unit
°C/W
Unit
µA
mA
V
2/7
Doc ID 018927 Rev 1
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