STPS3045C View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STPS3045C' PDF : 12 Pages View PDF
STPS3045C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF (1) Forward voltage drop
1. Pulse test: tp = 380 µs, < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = VRRM
IF = 15 A
IF = 30 A
200
µA
11
40
mA
0.5
0.57
0.84
V
0.65 0.72
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.01 IF2(RMS)
Figure 1. Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
12
11
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
10
9
8
7
6
5
4
3
2
1
IF(AV)(A)
0
0
2
4
6
8
10
12
14
δ=1
T
δ=tp/T
tp
16
18
20
Figure 2. Average forward current versus
ambient temperature ( = 0.5, per diode)
IF(AV)(A)
18
16
Rth(j-a)=Rth(j-c) (TO-220AB, I2PAK, D2PAK, SOT-93, TO-247)
14
Rth(j-a)=Rth(j-c) (TO-220FPAB)
12
10
8
Rth(j-a)=15°C/W
6
T
4
2
δ=tp/T
0
0
25
tp
50
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power derating Figure 4. Normalized avalanche power derating
versus pulse duration
versus junction temperature
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(Tj)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Doc ID 3510 Rev 8
3/12
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