STS3DPF30L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STS3DPF30L' PDF : 5 Pages View PDF
STS3DPF30L
THERMAL DATA
Rthj-amb
Tj
Tstg
*Thermal Resistance Junction-ambient Single Operation
Dual Operation
Maximum Operating Junction Temperature
Storage Temperature
78
62.5
150
-55 to 150
oC/W
oC/W
oC
oC
(*) Mounted on FR-4 board (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ.
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
Symbol
VGS(th)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 1.5 A
Resistance
VGS = 4.5 V ID = 1.5 A
Min.
1
Typ.
1.6
0.145
0.18
Max.
2.5
0.16
0.19
Unit
V
Ω
Ω
ID(on) On State Drain Current VDS > ID(on) x RDS(on)max
3
A
VGS = 10 V
DYNAMIC
Symbol
gfs (∗)
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 3 A
Min.
Typ.
3
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
510
pF
170
pF
55
pF
2/5
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