STS3DPF30L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STS3DPF30L' PDF : 5 Pages View PDF
STS3DPF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 15 V
ID = 1.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
VDD = 24 V ID = 3 A VGS = 4.5 V
Min.
Typ.
14.5
37
5.5
1.7
1.8
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 15 V
ID = 1.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, see fig. 3)
Min.
Typ.
88
23
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM(•)
VSD (∗)
trr
Qrr
IRRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD =3 A VGS = 0
ISD = 3 A
VDD = 15 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
3
12
Unit
A
A
1.2
V
T.B.D
ns
µC
A
3/5
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